RT3K66M

RT3K66M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K66M is a composite transistor built with two INK0012AX chips in SC-88 package. OUTLINE DRAWING 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit：mm FEATURE ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=1.0～2.0V ・Low on Resistance. RDS(on)=1.7Ω(TYP)＠ID=100mA, VGS=4.0V RDS(on)=1.0Ω(TYP)＠ID=100mA, VGS=10V ・High speed switching. ・Small package for easy mounting. 2.0 0.65 APPLICATION High speed switching , Analog switching 0.65 ⑥ Tr.1 ⑤ 0～0.1 ④ Tr.2 TERMINAL CONNECTOR ①：SOURCE1 ②：GATE1 ③：DRAIN2 ④：SOURCE2 ⑤：GATE2 ⑥:DRAIN1 JEITA：SC-88 ① ② ③ MAXIMUM RATING (Ta=25℃) SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING 30 UNIT V V mA mW ℃ ℃ MARKING ⑥⑤④ Drain-source voltage Gate-source voltage Drain current Total power dissipation（Ta=25℃） Channel temperature Range of Storage temperature ±20 200 150 ＋150 -55～＋150 .Ｋ６６ Ｙ９７ C９９ ①②③ ISAHAYA ELECTRONICS CORPORATION 0.13 0.9 RT3K66M Composite Transistor For high speed switching Silicon N-channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time I D=100μA, V V V V GS =0V 30 GS 245 1.7 1.0 23 7.0 30 66 ±1.0 1.0 2.0 - V μA μA V mS Ω pF pF ns GS=±15V, VDS=0V DS =30V ,VGS=0V DS= V I D=250μA, V DS 1.0 - | Yfs | RDS(on) Ciss Coss tON tOFF =10V, I D=100mA GS I D=100mA, V I D=100mA, V V V V DS =4.0V GS=10.0V =10V, V GS =0V,f=1MHz =5V , I D=10mA =0～5V GS DD Switching time test condition test circuit 5V IN OUT 5V 90% RL 0 10μs VDD=5V D.U.≦1% Common source Ta=25℃ 50Ω VDD input waveform 0V VDD 10% 10% output waveform VDS(ON） ton 90% tr toff tf ISAHAYA ELECTRONICS CORPORATION TYPICAL CHARACTERISTICS Ta=25℃ 100 2.7V 2.6V 2.5V 2.4V ID -VDS 1 Ta=25℃ 1.9V ID -VDS(Low voltage region) 1.85V 1.8V 80 Drain Current ID (mA) 60 VGS=2.2V Drain current ID (mA) 2.3V 0.8 0.6 1.75V 40 2.1V 0.4 1.7V 20 2.0V 1.9V 0.2 1.65V VGS=1.6V 1.5V 0 0 5 Drain-Source voltage VDS (V) 1.8V 0 10 0 0.1 0.2 0.3 0.4 Drain-Source voltage VDS (V) 0.5 IDR -VDS 100 Drain Reverse current IDR (mA) Ta=25℃ VGS=0V Drain current ID (mA) 1000 Ta=25℃ VDS=10V 100 ID -VGS 10 10 1 -0 -0.5 -1 -1.5 -2 Drain-Source voltage VDS (V) 1 0 1 2 3 4 5 Gate-Source voltage VGS (V) |Yfs| - ID Drain-Source on-stage resistance RDS(on) (Ω) RDS(on) - ID 5 1000 Forward transfer admittance |Yfs| (mS) Ta=25℃ VDS=10V 100 Ta=25℃ 4 3 2 VGS=4V 10V 10 1 1 1 10 100 1000 Drain current ID (mA) 0 0 50 100 Drain current　ID (mA) 150 200 t - ID 10000 Ta=25℃ toff C - VDS 100 Switching time t (ns) 1000 Ciss Capacitance C (pF) tf 10 Coss 100 ton 1 10 tr Ta=25℃ VGS=0V 1 0.1 1 10 Drain current ID (mA) 100 0.1 0.1 1 10 Drain-Source voltage VDS (V) 100 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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