0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
RT3N55M

RT3N55M

  • 厂商:

    ISAHAYA

  • 封装:

  • 描述:

    RT3N55M - Composite Transistor With Resistor - Isahaya Electronics Corporation

  • 数据手册
  • 价格&库存
RT3N55M 数据手册
PRELIMINARY R T3N55M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT3N55M is a composite transistor built with two RT1N144 chips in SC-88 package. OUTLINE DRAWING 2.1 1.25 ① 0.65 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit:mm FEATURE Silicon NPN epitaxial type Each transistor elements are independent. Mini package for easy mounting 2.0 APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 0.65 0.13 0∼0.1 ⑥ RTr1 ⑤ R1 R2 R2 ① R1 ② RTr2 ④ TERMINAL CONNECTOR ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1 JEITA :SC-88 0.9 ③ M AXIMUM RATING (Ta=25 ℃) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Total, Ta=25℃) Junction temperature Storage temperature RATING 50 6 50 100 200 150 +150 -55∼+150 UNIT V V V mA mA mW ℃ ℃ 6 5 4 MARKING .N 5 5 1 2 3 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY R T3N55M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type E LECTRICAL CHARACTERISTICS (Ta=25℃ RTr1,RTr2 to common) Symbol V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT Parameter Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product Test conditions IC=100μA,RBE=∞ VCB =50V,IE=0 VCE=5V,IC=5mA IC=10mA,IB=5mA VCE=0.2V,IC=5mA VCE=5V,IC=100μA VCE=6V,IE=-10mA Limits Min 50 50 0.4 7 4.2 Typ 0.1 1.0 0.7 10 4.7 200 Max 0.1 0.3 1.8 13 5.1 Unit V μA V V V kΩ MHZ INPUT ON VOLTAGE VS. COLLECTOR CURRENT 10 VCE=0.2V INPUT ON VOLTAGE VI(ON)(V) DC FORWARD CURRENT hFE 1000 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT VCE=5V 1 100 0.1 1 10 COLLECTOR CURRENT IC(mA) 100 10 1 10 COLLECTOR CURRENT IC(mA) 100 COLLECTOR CURRENT VS. INPUT OFF VOLTAGE 1000 COLLECTOR CURRENT IC(μA) VCE=5V 100 10 0.0 0.4 0.8 1.2 1.6 INPUT OFF VOLTAGE VI(OFF)(V) 2.0 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. N otes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , s uch as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003
RT3N55M 价格&库存

很抱歉,暂时无法提供与“RT3N55M”相匹配的价格&库存,您可以联系我们找货

免费人工找货