PRELIMINARY
R T3T66M
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
DESCRIPTION
RT3T66M is a composite transistor built with RT1N430 chip and RT1P430 chip in SC-88 package.
OUTLINE DRAWING
2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2
Unit mm :
FEATURE
Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting
2.0
APPLICATION
Inverted circuit, switching circuit, interface circuit, driver circuit
0.65 0.13 0∼0.1 ⑥ RTr1 ⑤ R1 RTr2 R1 ② ④
TERMINAL CONNECTOR ① EMITTER1 : ② BASE1 : ③ COLLECTOR2 : ④ EMITTER2 : ⑤ BASE2 : ⑥:COLLECTOR1 JEITA:SC-88
0.9 ①
0.65
③
MAXIMUM RATING (Ta=25 ℃)
SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation Total, Ta=25℃ ( ) Junction temperature Storage temperature RATING 50 6 50 100 200 150 +150 -55∼+150 UNIT V V V mA mA mW ℃ ℃ 6 5 4
MARKING
.T 6 6
1 2 3
ISAHAYA ELECTRONICS CORPORATION
P RELIMINARY
R T3T66M
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25 ℃)
Symbol V(BR)CEO ICBO hFE VCE(sat) R1 fT Parameter Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input resistor Gain band width product Test conditions IC=-100 μA,RBE=∞ VCB =-50V,IE=0 VCE=-5V,IC=-1mA IC=-10mA,I B=-0.5mA VCE=-6V,IE=10mA Limits Min 50 100 3.3 Typ 0.1 4.7 150 Max 0.1 0.3 6.1 Unit V μA V kΩ MHZ
TYPICAL CHARACTERISTICS
DC forward gain current - Collector current 1000 10 Input on voltage - Collector current
VCE=5V
Input on voltage VI(ON) (V) DC forward gain current hFE
VCE=0.2V
100
1
10 0.1 1 10 100 Collector current Ic(mA)
0.1 0.1 1 10 100 Collector current Ic (mA)
Collector current -Input off voltage 1000
VCE=5V
Collector current (uA) Ic
100
10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Input off voltage VI(OFF) (V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003
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