RT3U11M

PRELIMINARY RT3U11M Composite Transistor For high speed switching Silicon N-channel + P-channel MOSFET DESCRIPTION RT3U11M is a composite transistor built with OUTLINE DRAWING 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit：mm INK0001AX and INJ0001AX chips in SC-88 package. FEATURE ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=0.6～1.2V ・Low on Resistance. Ron= 3.5 / 7Ω(Tr1/Tr2) TYP ・High speed switching. ・Small package for easy mounting. 2.0 APPLICATION high speed switching , Analog switching *P-channel MOSFET Tr2’s minus sign is omitted 0～0.1 0.65 0.13 ⑤ Tr.1 0.9 0.65 ⑥ ④ Tr.2 TERMINAL CONNECTOR ①：SOURCE1 ②：GATE1 ③：DRAIN2 ④：SOURCE2 ⑤：GATE2 ⑥:DRAIN1 JEITA：SC-88 ① ② ③ MAXIMUM RATING (Ta=25℃) SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING 50 UNIT V V mA mW ℃ ℃ 6 5 4 MARKING Drain-source voltage Gate-source voltage Drain current Total power dissipation（Ta=25℃） Channel temperature Range of Storage temperature ±8 100 150 ＋125 -55～＋125 . .Ｕ１ １ １ 2 3 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3U11M Composite Transistor For high speed switching Silicon N-channel + P-channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance I D=100μA, VGS=0V V V GS=±5V, VDS=0V DS 50 GS 250 220 3.5 7.0 24 28 5.0 5.2 11 13 50 135 ±0.5 50 1.2 - V μA μA V mS Ω pF pF =50V ,VGS=0V DS= V I D=250μA, V V DS 0.6 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 - | Yfs | RDS(ON) Ciss Coss tON tOFF =10V, I D=0.1A GS I D=100mA, V V V DS =4.0V =10V, V =10V, V GS =0V,f=1MHz =0V,f=1MHz DS GS Switching time V V =5V , I D=10mA =0～5V GS DD ns Switching time test condition ( Tr.1 ) test circuit 5V IN OUT 5V 90% RL 0 10μs VDD=5V D.U.≦1% Common source Ta=25℃ 50Ω VDD input waveform 0V VDD 10% 10% output waveform VDS(ON） ton 90% tr toff tf Switching time test condition ( Tr.2 ) test circuit 0 IN OUT 0V RL -5V 10μs VDD=-5V D.U.≦1% Common source Ta=25℃ 50Ω VDD input waveform -5V VDS(ON） 10% 90% output waveform VDD ton 90% 10% tr toff tf ISAHAYA ELECTRONICS CORPORATION TYPICAL CHARACTERISTICS ( Tr.1 ) Ta=25℃ 100 1.6 V 80 Drain current ID (mA) 1.4V 60 1.3V 1.2 V 20 1.1 V VGS=1.0 V 0 5 Drain-Source voltage VDS (V) 10 Drain current ID (mA) 1.5V 0.8 ID -VDS 1 1.0V 0.95V Ta=25℃ ID -VDS(Low voltage region) 0.6 40 0.4 0.9V 0.2 0.85V VGS=0.8V 0 0 0 0.1 0.2 0.3 0.4 0.5 Drain-Source voltage VDS (V) IDR -VDS 100 Drain reverse current IDR (mA) Ta=25℃ VGS=0V Drain current ID (mA) 1000 Ta=25℃ VDS=10V ID -VGS 100 10 10 1 -0 -0.5 -1 -1.5 Drain-Source voltage VDS (V) |Yfs| - ID 1000 Ta=25℃ VDS=10V Forward transfer admittance |Yfs| (mS) Drain-Source ON voltage VDS(ON) (mV) -2 1 0 1 2 3 Gate-Source voltage VGS (V) VDS(ON) - ID 1000 Ta=25℃ VGS=4V 4 5 100 100 10 10 1 1 10 100 Drain current ID (mA) t - ID 10000 Ta=25℃ toff 1000 Switching time t (ns) 100 1000 1 1 10 Drain current　ID (mA) C - VDS 100 Ciss Capacitance C (pF) tf 100 10 Coss 10 ton tr Ta=25℃ VGS=0V 1 1 0.1 1 10 Drain current ID (mA) 100 0.1 1 10 Drain-Source voltage VDS (V) 100 ISAHAYA ELECTRONICS CORPORATION TYPICAL CHARACTERISTICS ( Tr.2 ) Ta=25℃ ID -VDS -10 -1.6V Ta=25℃ ID -VDS(Low voltage region) -100 -80 Drain current ID (mA) -1.5V -8 Drain current ID (mA) -1.0V -60 -1.4V -6 -0.95V -40 -1.3V -1.2V -4 VGS=-0.9V -20 -1.1V VGS=-1.0V -2 -0.85V -0.8V -0 -0 -5 Drain-Source voltage VDS (V) -10 -0 -0 -0.1 -0.2 -0.3 -0.4 -0.5 Drain-Source voltage VDS (V) IDR -VDS -100 Drain reverse current IDR (mA) Ta=25℃ VGS=0V Drain current ID (mA) -1000 Ta=25℃ VDS=-10V -100 ID -VGS -10 -10 -1 0 0.5 1 1.5 Drain-Source voltage VDS (V) 2 -1 -0 -1 -2 -3 -4 Gate-Source voltage VGS (V) -5 |Yfs| - ID 1000 Forward transfet admittance |Yfs| (mS) Ta=25℃ VDS=-10V 100 Drain-Source ON voltage VDS(ON)(mV) -100 -1000 Ta=25℃ VGS=-4V VDS(ON) - ID 10 -10 1 -1 -10 -100 Drain current ID (mA) -1000 -1 -1 -10 Drain current　ID (mA) -100 t - ID 10000 Ta=25℃ toff Switching time t (ns) 1000 C - VDS 100 Capacitance C (pF) tf Ciss 100 10 10 ton tr Ta=25℃ VGS=0V Coss 1 -0.1 -1 -10 Drain current ID (mA) -100 1 -0.1 -1 -10 Drain-Source voltage VDS (V) -100 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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