RTAN430X

ＲＴＡＮ４３０Ｘ SERIES FEATURE ・Built-in bias resistor (R1=4.7kΩ) ・Small package for easy mounting. ・High reverse hFE ・Small collector to emitter saturation voltage. VCE(sat)=10mV(TYP.)（@IC=10mA/IB=0.5mA） ・Low on Resistance Ron=0.80Ω(TYP.)（@VI=5V） TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING RTAN430T2 (PRELIMINARY) RTAN430M 2.1 0.2 0.8 0.2 0.425 1.25 Unit：mm 0.425 0.25 0.4 APPLICATION muting circuit , switching circuit 1.2 0.8 0.65 ① ② ③ ① ② ③ 2.0 1.3 0.4 0.9 0.65 EQUIVALENT CIRCUIT C (OUT) 0.7 R1 B (IN) JEITA, JEDEC：－ ISAHAYA：T-USM TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR RTAN430U 1.6 0.4 0.8 0.4 JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR RTAN430C 2.5 0.5 1.5 0.5 E (GND) 0.3 0～0.1 0.15 ① ② ③ 0～0.1 0.16 0.4 0.5 ① ② ③ 2.9 1.90 1.6 1.0 0.7 0.55 0.15 1.1 JEITA：SC-75A JEDEC：－ TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR 0～0.1 JEITA：SC-59 JEDEC：Similar to TO-236 TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR ISAHAYA ELECTRONICS CORPORATION 0.8 0.95 0.5 0.95 0.5 0.3 ＲＴＡＮ４３０Ｘ SERIES MAXIMUM RATING（Ｔａ＝２５℃） SYMBOL ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ ＩＣ ＰＣ Ｔｊ Ｔｓｔｇ PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RTAN430T2 RATING RTAN430U RTAN430M 40 40 20 400 150 +150 -55～+150 200 TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE RTAN430C UNIT V V V mA mW ℃ ℃ 125（※） +125 -55～+125 ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃） SYMBOL Ｖ（ＢＲ）ＣBＯ Ｖ（ＢＲ）EBＯ Ｖ（ＢＲ）CEＯ Ｉ ＣＢＯ Ｉ EＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） Ｒ１ ｆＴ RON PARAMETER C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product Output “ON” resistance ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. TEST CONDITION I C=50μA，IE=0mA I E=50μA，IC=0mA I C=1mA，RBE=∞ VCB=40V，I E =0mA VEB=40V，I C =0mA VCE=5V，I C =10mA I C =10mA，I B =0.5mA VCE=10V，I E =-10mA，f=100MHz VI=5V，RL=1kΩ MIN 40 40 20 LIMIT TYP MAX UNIT V V V μA μA － mV kΩ MHz Ω 820 3.29 10 4.7 38 0.80 0.5 0.5 2500 6.11 TYPICAL CHARACTERISTICS Input on voltage - collector current 100 Ta=25℃ VCE=0.2V collector current - Input on voltage 1000 Ta=25℃ VCE=5V 10 collector current IC (μA) Input on voltage VI(ON) (V) 100 1 0.1 0.1 1 10 collector current IC (mA) 100 1000 10 0 0.2 0.4 0.6 0.8 1 Input off voltage VI(OFF) (V) ISAHAYA ELECTRONICS CORPORATION DC forward gain current - collector current 10000 10000 DC revarse gain current - collector current 1000 DC reverse gain current hFER DC forward gain current hFE 1000 100 Ta=25℃ VCE=5V 100 Ta=25℃ VEC=5V 10 10 1 0.1 1 10 collector current IC (mA) 100 1000 1 0.1 1 10 collector current IC (mA) 100 1000 collector-emitter saturation voltage - collector current Ron-VIN 100 1000 collector-emitter saturation voltage VCE(sat) (mV) ON RESISTANCE Ron (Ω) Ta=25℃ IC/IB=20 100 10 10 1 Ta=25℃ 1 0.1 0.1 1 10 100 1000 collector current IC (mA) 0.1 0.1 1 10 100 INPUT VOLTAGEVI (V) ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. N otes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Apr.2007