2N3054A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3054 2N3054A DESCRIPTION ・With TO-66 package APPLICATIONS ・Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current 2N3054 Power dissipation 2N3054A Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 90 55 7 4 2 25 W 75 200 -65~200 ℃ ℃ UNIT V V V A A THERMAL CHARACTERISTICS SYMBOL PARAMETER 2N3054 Rth j-C Thermal resistance junction to case 2N3054A 2.33 MAX 7.0 ℃/W UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat-1 VCEsat-2 VBE ICEV ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=0.5A ;IB=50mA IC=3A; IB=1A IC=0.5A ; VCE=4V VCE=90V;VBE(off)=1.5V TC=150℃ VCE=30V; IB=0 VEB=7V; IC=0 IC=0.1A ; VCE=10V IC=1A ; VCE=2V IC=0.2A ; VCE=10V;f=1MHz 2N3054 2N3054A MIN 55 TYP. MAX UNIT V 1.0 6.0 1.7 1.0 6.0 0.5 1.0 40 8 3.0 80 V V V mA mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3054 2N3054A Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3054 2N3054A 4