2N3055A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055A DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A APPLICATIONS ·Designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers,DC-DC converters, inverters, or for inductive loads. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEV VCEO VEBO IC IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 100 100 60 7 15 7 115 200 -65~200 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.52 UNIT ℃/W isc Website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 hFE-3 Is/b COB fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Second Breakdown Collector Current with Base Forward Biased Output Capacitance Current Gain-Bandwidth Product CONDITIONS IC=200mA ; IB= 0 IC= 4A; IB= 0.4A IC= 10A; IB= 3.3A IC= 15A; IB= 7A IC= 4A ; VCE= 4V VCE= 30V; IB= 0 VCE= 100V; VBE(off)= 1.5V VCE= 100V; VBE(off)= 1.5V,TC=150℃ VEB= 7.0V; IC= 0 IC= 4A; VCE= 2V IC= 4A; VCE= 4V IC= 10A; VCE= 4V VCE= 60V; t= 0.5s,Nonrepetitive IE= 0; VCB= 10V; f= 1.0MHz IC= 1A; VCE= 4V; f= 1.0MHz 0.8 10 20 5 1.95 MIN 60 2N3055A MAX UNIT V 1.1 3.0 5.0 1.8 0.7 5.0 30 5.0 70 70 V V V V mA mA mA A 600 pF MHz Switching Times td tr tstg tf Delay Time Rise Time Storage Time Fall Time 0.5 4.0 3.0 6.0 μs μs μs μs IC= 4A; VCC= 30V; IB1= -IB2= 0.4A, tp= 25μs; Duty Cycle≤ 2% isc Website：www.iscsemi.cn 2