2N3183

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N3183 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -40 -40 -5 -5 75 150 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N3183 MAX UNIT VCEO Collector-emitter sustaining voltage IC=-0.2A ;IB=0 -40 V VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-1A -1.5 V VBE(on) ICEO Base-emitter on voltage IC=-5A ; VCE=-4V -2.0 V Collector cut-off current VCE=Rated VCEO; IB=0 -5.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-0.3A ; VCE=-4V 30 hFE-2 DC current gain IC=-3A ; VCE=-4V 15 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N3183 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3