2N3234

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3234 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio amplifier and power switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 160 160 7 7.5 115 150 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N3234 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 160 V VCE(sat) Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.0 V VBE(on) Base-emitter on voltage IC=3A ; VCE=4V 1.5 V ICEO Collector cut-off current VCE=80V; IB=0 0.7 mA ICBO Collector cut-off current VCB=160V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=10V 18 55 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3234 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3