2N3441

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25℃ APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: ·Driver for high power outputs ·Series and shunt regulators ·Audio and servo amplifiers ·Solenoid and relay drivers ·Power switching circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 160 140 7 3 2 25 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case MAX 7.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(on) ICEX ICEO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ; IB=0 IC=2.7A; IB=0.9A IC=2.7A ; VCE=4V VCE=140V;VBE(off)=1.5V VCE=140V;VBE(off)=1.5V TC=150℃ VCE=140V; IB=0 VEB=7V; IC=0 IC=0.5A ; VCE=4V IC=2.7A ; VCE=4V 25 5 MIN 140 2N3441 TYP. MAX UNIT V 6.0 6.7 5.0 6.0 10 1.0 100 V V mA mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3441 Fig.2 Outline dimensions 3