2N3447

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 60 7 7.5 115 150 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA ;IB=0 IC=5A; IB=0.5A IC=7A;IB=1.5A IC=5A ; VCE=5V VCE=60V; IB=0 VCB=80V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V 40 MIN 60 TYP. 2N3447 MAX UNIT V 1.5 3.0 1.5 0.7 0.1 0.1 120 V V V mA mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3447 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3