2N3583

2N3583

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N3583 - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2N3583 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION ·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 250 175 6 1.0 5.0 1.0 35 200 -65~200 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N3583 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 175 V VCE(sat) VBE(on) ICEO ICEX Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A B 5.0 V Base-Emitter On Voltage IC= 1A ; VCE= 10V 1.4 V Collector Cutoff Current VCE= 150V; IB= 0 VCE= 225V; VBE(off)= 1.5V VCE= 225V; VBE(off)= 1.5V,TC=150℃ VEB= 6V; IC=0 10 1.0 3.0 5.0 mA Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 10V 40 hFE-2 DC Current Gain IC= 0.5A ; VCE= 10V 40 200 hFE-3 DC Current Gain IC= 1A ; VCE= 10V 10 isc Website:www.iscsemi.cn 2
2N3583
物料型号: - 型号为2N3583,是一种NPN型功率晶体管。

器件简介: - 该晶体管具有连续集电极电流IC=1A,功率耗散PD=35W在TC=25℃时,集电极-发射极饱和电压VCE(sat)=5.0V(最大值)在IC=1A时。

引脚分配: - 引脚1:基极(BASE) - 引脚2:发射极(EMITTER) - 引脚3:集电极(COLLECTOR,外壳)

参数特性: - 绝对最大额定值包括:Vcbo(集电极-基极电压)250V,Vceo(集电极-发射极电压)175V,Vebo(发射极-基极电压)6V,Ic(连续集电极电流)1.0A,Icm(峰值集电极电流)5.0A,Ib(基极电流)1.0A,Pc(集电极功率耗散在Tc=25°C时)35W,Tj(结温)200℃,Tstg(存储温度)-65~200℃。

功能详解: - 该晶体管适用于高速开关和线性放大应用,如高压运算放大器、开关稳压器、转换器、偏转级和高保真放大器。

应用信息: - 适用于高速开关和线性放大应用,包括高电压运算放大器、开关稳压器、转换器、偏转级和高保真放大器。

封装信息: - 封装形式为TO-66。
2N3583 价格&库存

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