2N3583

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION ·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 250 175 6 1.0 5.0 1.0 35 200 -65~200 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N3583 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 175 V VCE(sat) VBE(on) ICEO ICEX Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A B 5.0 V Base-Emitter On Voltage IC= 1A ; VCE= 10V 1.4 V Collector Cutoff Current VCE= 150V; IB= 0 VCE= 225V; VBE(off)= 1.5V VCE= 225V; VBE(off)= 1.5V,TC=150℃ VEB= 6V; IC=0 10 1.0 3.0 5.0 mA Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 10V 40 hFE-2 DC Current Gain IC= 0.5A ; VCE= 10V 40 200 hFE-3 DC Current Gain IC= 1A ; VCE= 10V 10 isc Website：www.iscsemi.cn 2