2N3585

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3585 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25℃ ·VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS ·High speed switching and linear amplification ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 300 6 2 5 1 35 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat VBE ICEX ICEO IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=0.2A ; IB=0 IC=1A; IB=0.125A IC=1A ;IB=0.1A IC=1A ; VCE=10V VCE=450V;VBE(off)=1.5V VCE=300V;VBE(off)=1.5V TC=150℃ VCE=150V; IB=0 VEB=6V; IC=0 IC=0.1A ; VCE=10V IC=1A ; VCE=2V IC=1A ; VCE=10V 40 8 25 MIN 300 TYP. 2N3585 MAX UNIT V 0.75 1.4 1.4 1.0 3.0 5.0 0.5 V V V mA mA mA 80 100 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3585 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3585 4