INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 15A ·Low Saturation Voltage: VCE(sat)= 2.0V(Max)@ IC = 15A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEX VCEO VEBO IC ICM IB IBM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 50 50 40 5 30 30 7.5 15 150 200 -65~200 UNIT V V V V A A A A W ℃ ℃
2N3771
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS) VCER(SUS) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage CONDITIONS IC= 200mA ; IB= 0 IC= 200mA ; VBE(off)= 1.5V; RBE=100Ω IC= 200mA ; RBE= 100Ω IC= 15A; IB= 1.5A IC= 30A; IB= 6A IC= 15A ; VCE= 4V VCE= 30V; IB= 0 VCE= 50V; VBE(off)= 1.5V VCE= 30V; VBE(off)= 1.5V,TC=150℃ VCB= 50V; IE= 0 VEB= 5V; IC=0 IC= 15A ; VCE= 4V IC= 30A ; VCE= 4V 15 5 MIN 40 50 45
2N3771
MAX
UNIT V V V
VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEV ICBO IEBO hFE-1 hFE-2 fT
Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current
2.0 4.0 2.7 10 2.0 10 2.0 5.0 60
V V V mA mA
Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Second Breakdown Collector Current with Base Forward Biased
mA mA
IC= 1A ; VCE= 4V ;ftest= 50kHz VCE= 40V,t= 1.0s,Nonrepetitive
0.2 3.75
MHz A
Is/b
isc Website:www.iscsemi.cn
2
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