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2N3771

2N3771

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N3771 - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2N3771 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 15A ·Low Saturation Voltage: VCE(sat)= 2.0V(Max)@ IC = 15A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEX VCEO VEBO IC ICM IB IBM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 50 50 40 5 30 30 7.5 15 150 200 -65~200 UNIT V V V V A A A A W ℃ ℃ 2N3771 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS) VCER(SUS) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage CONDITIONS IC= 200mA ; IB= 0 IC= 200mA ; VBE(off)= 1.5V; RBE=100Ω IC= 200mA ; RBE= 100Ω IC= 15A; IB= 1.5A IC= 30A; IB= 6A IC= 15A ; VCE= 4V VCE= 30V; IB= 0 VCE= 50V; VBE(off)= 1.5V VCE= 30V; VBE(off)= 1.5V,TC=150℃ VCB= 50V; IE= 0 VEB= 5V; IC=0 IC= 15A ; VCE= 4V IC= 30A ; VCE= 4V 15 5 MIN 40 50 45 2N3771 MAX UNIT V V V VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEV ICBO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current 2.0 4.0 2.7 10 2.0 10 2.0 5.0 60 V V V mA mA Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Second Breakdown Collector Current with Base Forward Biased mA mA IC= 1A ; VCE= 4V ;ftest= 50kHz VCE= 40V,t= 1.0s,Nonrepetitive 0.2 3.75 MHz A Is/b isc Website:www.iscsemi.cn 2
2N3771 价格&库存

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