2N3879

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3879 DESCRIPTION ·With TO-66 package ·Wide area of safe operation ·High sustaining voltage APPLICATIONS ·For high-speed switching and linearamplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO(SUS) VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter sustaining voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 75 7 7 10 5 35 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICEV ICEO IEBO hFE-1 hFE-2 hFE-3 COB PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector output capacitance CONDITIONS IC=0.2A ; IB=0 IC=4A; IB=0.4A IC=4A; IB=0.4A VCE=120V;VBE(off)=1.5V VCE=100V;VBE(off)=1.5V TC=150℃ VCE=40V; IB=0 VEB=7V; IC=0 IC=4A ; VCE=2V IC=4A ; VCE=5V IC=0.5A ; VCE=5V IE=0 ; VCB=10V; f=1MHz 12 20 40 MIN 75 TYP. 2N3879 MAX UNIT V 1.2 2.0 0.5 4.0 5.0 1.0 100 80 V V mA mA mA 175 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3879 Fig.2 Outline dimensions 3