2N4399

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5301/5302/5303 ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N4398 2N4399 2N5745 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N4398 VCBO Collector-base voltage 2N4399 2N5745 2N4398 VCEO Collector-emitter voltage 2N4399 2N5745 VEBO IC IB PD Tj Tstg Emitter-base voltage 2N4398/4399 Collector current 2N5745 Base current Total power dissipation Junction temperature Storage temperature TC=25℃ -20 -7.5 200 200 -65~200 A W ℃ ℃ Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -30 A V V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N4398 VCEO(SUS) Collector-emitter sustaining voltage 2N4399 2N5745 VCEsat-1 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage 2N4398/4399 IC=-10A; IB=-1A 2N5745 2N4398/4399 IC=-15A ;IB=-1.5A 2N5745 2N4398/4399 2N5745 IC=-20A ;IB=-2A IC=-0.2A ;IB=0 2N4398 2N4399 2N5745 CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -0.75 V -1.0 -1.0 V -1.5 -2.0 IC=-20A ;IB=-4A IC=-30A ;IB=-6A IC=-10A; IB=-1A -4.0 -1.6 V -1.7 -1.85 IC=-15A ;IB=-1.5A V -2.0 IC=-20A ;IB=-2A -2.5 V IC=-20A ;IB=-4A IC=-15A ; VCE=-2V IC=-10A ; VCE=-2V IC=-30A ; VCE=-4V IC=-20A ; VCE=-4V VCE= Rated VCEO; VBE(off)=-1.5V TC=150℃ VCE=Rated VCEO; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V 40 15 60 -1.7 V -1.5 -3.0 V -2.5 -5 -10 -5.0 -5.0 mA mA mA V V VCEsat-2 VCEsat-3 VCEsat-4 VBEsat-1 Collector-emitter saturation voltage Only for 2N4398 2N4399 Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N4398/4399 2N5745 2N4398/4399 2N5745 2N4398/4399 2N5745 2N4398/4399 2N5745 2N4398/4399 2N5745 VBEsat-2 VBEsat-3 VBE-1 VBE-2 ICEX ICEO IEBO hFE-1 hFE-2 Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain 2N5745 DC current gain 2N4398/4399 2N5745 IC=-10A ; VCE=-2V IC=-15A ; VCE=-2V IC=-20A ; VCE=-2V 5 IC=-30A ; VCE=-4V 4 IC=-1A ; VCE=-10V;f=1.0MHz MHz 2 hFE-3 DC current gain 2N4398/4399 2N4398/4399 2N5745 fT Transition frequency 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N4398 2N4399 2N5745 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3