2N4901

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION ・With TO-3 package ・Complement to type 2N5067/5068/5069 ・Low collector saturation voltage APPLICATIONS ・For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N4901 VCBO Collector-base voltage 2N4902 2N4903 2N4901 VCEO Collector-emitter voltage 2N4902 2N4903 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -5 -10 -1 87.5 200 -65~200 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 2N4903 VCEsat-1 VCEsat-2 VBE ICEO ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-1A; IB=-0.1A IC=-5A ;IB=-1A IC=-1A ; VCE=-2V IC=-0.2A ;IB=0 2N4901 2N4902 2N4903 CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -0.4 -1.5 -1.2 -1.0 -0.1 -1.0 -2.0 -1.0 20 7 4 80 V V V mA mA mA mA VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-10V MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N4901 2N4902 2N4903 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3