2N4909

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4909 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.75V(Max.)@ IC= -4A ·DC Current Gain: hFE= 20-80 @IC= -4A APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -80 -80 -5 -10 -4 150 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N4909 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -0.75 V VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.5 V VBE(on) ICEO Base-Emitter On Voltage IC= -4A; VCE= -4V -1.5 V Collector Cutoff Current VCE= -80V; IB= 0 -1.0 mA ICBO Collector Cutoff Current VCB= -80V; IE= 0 VCE= -80V; VBE(off)= -1.5V VCE= -80V; VBE(off)= -1.5V, TC=150℃ VEB= -5V; IC= 0 -0.1 -0.1 -2.0 -1.0 mA ICEX Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= -4A; VCE= -4V 20 80 hFE-2 DC Current Gain Current-Gain—Bandwidth Product IC= -10A; VCE= -4V 5 fT IC= -1A; VCE= -10V; ftest= 1.0MHz 4 MHz isc Website：www.iscsemi.cn 2