2N4911

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4911 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation APPLICATIONS ·Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 60 60 5 1 4 1 25 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 7.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage CONDITIONS IC= 100mA; IB= 0 IC= 1A; IB= 0.1A IC= 1A; IB= 0.1A IC= 1A ; VCE= 1V VCE= 60V;VBE(off)= 1.5V VCE= 60V;VBE(off)= 1.5V;TC=150℃ VCE=30V; IB= 0 VCB= 60V; IE= 0 VEB= 5V; IC= 0 IC= 50mA ; VCE= 1V IC= 500mA ; VCE= 1V IC= 1A ; VCE= 1V 40 20 10 3 MIN 60 TYP. 2N4911 MAX UNIT V VCE(sat) VBE(sat) VBE(on) ICEX ICEO ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB 0.6 1.3 V V Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current 1.3 0.1 1.0 0.5 0.1 1.0 V mA mA mA mA DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product 100 IC= 0.25A; VCE= 10V, ftest= 1MHz IE= 0; VCB= 10V; ftest= 100kHz MHz Output Capacitance 100 pF isc Website：www.iscsemi.cn 2