2N4915

2N4915

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N4915 - isc Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2N4915 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4915 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 5A ·DC Current Gain: hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4906 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 80 80 5 5 1 87.5 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N4915 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VBE(on) ICEO Base-Emitter On Voltage IC= 2.5A; VCE= 2V 1.4 V Collector Cutoff Current VCE= 80V; IB= 0 1.0 mA ICBO Collector Cutoff Current VCB= 80V; IE= 0 VCE= 80V; VBE(off)= -1.5V VCE= 80V; VBE(off)= -1.5V, TC=150℃ VEB=-5V; IC= 0 0.1 0.1 2.0 1.0 mA ICEV Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 2.5A; VCE= 2V 25 100 hFE-2 DC Current Gain Current-Gain—Bandwidth Product IC= 5A; VCE= 2V 7 fT IC= 1A; VCE= 10V; ftest= 1.0MHz 4 MHz isc Website:www.iscsemi.cn 2
2N4915
1. 物料型号:2N4915,是INCHANGE Semiconductor生产的NPN型功率晶体管。

2. 器件简介: - 低集电极饱和电压:V_{CE(sat)}=1.5V(最大值)@ I_{C}=5A。 - 直流电流增益:h_{FE}=25-100 @ I_{C}=2.5A。 - 是2N4906型号的互补类型。

3. 引脚分配: - PIN 1: BASE(基极) - PIN 2: EMITTER(发射极) - PIN 3: COLLECTOR(集电极,带散热片)- TO-3封装。

4. 参数特性: - 集电极-基极电压(VCBO):80V - 集电极-发射极电压(VCEO):80V - 发射极-基极电压(VEBO):5V - 集电极电流(Ic):连续5A - 基极电流(IB):连续1A - 集电极功耗(Pc)@Tc=25°C:87.5W - 结温(TJ):200°C - 存储温度(Tstg):-65~200°C

5. 功能详解: - 设计用于功率放大和开关电路中的通用器件。

6. 应用信息: - 适用于一般用途的功率放大和开关电路。

7. 封装信息: - 封装类型为TO-3,具体尺寸参数如下: - A: 39.00mm - B: 25.30mm到26.67mm - C: 7.80mm到8.30mm - D: 0.90mm到1.10mm - E: 1.40mm到1.60mm - G: 10.92mm - H: 5.46mm - K: 11.40mm到13.50mm - L: 16.75mm到17.05mm - N: 19.40mm到19.62mm - O: 4.00mm到4.20mm - U: 30.00mm到30.20mm - V: 4.30mm到4.50mm - 热阻参数:Rth j-c(结到外壳热阻):2.0°C/W
2N4915 价格&库存

很抱歉,暂时无法提供与“2N4915”相匹配的价格&库存,您可以联系我们找货

免费人工找货