2N5038

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 DESCRIPTION ・With TO-3 package ・High speed ・Low collector saturation voltage APPLICATIONS ・They are especially intended for high current and fast switching applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER 2N5038 Collector-base voltage 2N5039 2N5038 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5039 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 75 7 20 30 5 140 200 -65~200 V A A A W ℃ ℃ Open emitter 120 90 V CONDITIONS VALUE 150 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter sustaining voltage 2N5038 IC=0.2A ;IB=0 2N5039 2N5038 2N5039 IC=12A ;IB=1.2A 1.0 IC=10A ;IB=1A IC=20A ;IB=5A IC=20A ;IB=5A IC=12A ; VCE=5V 1.8 2N5039 2N5038 ICEO Collector cut-off current 2N5039 2N5038 ICEX Collector cut-off current 2N5039 2N5038 IEBO Emitter cut-off current 2N5039 hFE-1 DC current gain 2N5038 hFE-2 DC current gain 2N5039 Is/b Second breakdown collector current IC=10A ; VCE=5V VCE=28V, VCE=45V(t=1.0s Nonrepetitive) 5 0.9 A IC=2A ; VCE=5V IC=12A ; VCE=5V 20 100 50 VEB=5V; IC=0 15 250 VCE=55V; IB=0 VCE=140V; VBE=-1.5V VCE=100V; VBE=-1.5V ;TC=150℃ VCE=110V; VBE=-1.5V VCE=85V; VBE=-1.5V TC=150℃ 5.0 10 5.0 10 5 mA IC=10A ; VCE=5V VCE=70V; IB=0 20 mA V 2.5 3.3 V V V 75 CONDITIONS MIN 90 V TYP MAX UNIT VCEO(SUS) VCEsat-1 Collector-emitter saturation voltage VCEsat-2 VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2N5038 VBE Base-emitter on voltage mA Switching times tr ts tf Rise time Storage time Fall time For 2N5038 IC=12A ;IB1=- IB2=1.2A ;VCC=30V For 2N5039 IC=10A ;IB1=- IB2=1A ;Vcc=30V 0.5 1.5 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5038 2N5039 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3