2N5050

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High breakdown voltage ・Excellent safe operating area APPLICATIONS ・Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5050 2N5051 2N5052 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5050 VCBO Collector-base voltage 2N5051 2N5052 2N5050 VCEO Collector-emitter voltage 2N5051 2N5052 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 125 150 200 125 150 200 7 2 40 150 -65~200 V A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 7.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5050 VCEO(SUS) Collector-emitter sustaining voltage 2N5051 2N5052 VCEsat VBEsat VBE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N4910 ICEO Collector cut-off current 2N4911 2N4912 ICBO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency IC=2A; IB=0.5A IC=2A; IB=0.5A IC=750mA ; VCE=5V VCE=125V; IB=0 VCE=150V; IB=0 VCE=200V; IB=0 VCB=Rated VCBO; IE=0 VEB=7V; IC=0 IC=750mA ; VCE=5V IC=0.1A ;IB=0 2N5050 2N5051 2N5052 CONDITIONS MIN 125 150 200 TYP. MAX UNIT V 1.2 1.5 1.2 V V V 5.0 mA 0.1 1.0 25 10 100 mA mA IC=500mA;VCE=10V;f=1MHz MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5050 2N5051 2N5052 Fig.2 outline dimensions 3