2N5194

2N5194

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N5194 - Silicon PNP Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2N5194 数据手册
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2N5190/5191/5192 ・Excellent safe operating area APPLICATIONS ・For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N5193 2N5194 2N5195 ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N5193 VCBO Collector-base voltage 2N5194 2N5195 2N5193 VCEO Collector-emitter voltage 2N5194 2N5195 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -4 -7 -1 40 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5193 VCEO(SUS) Collector-emitter sustaining voltage 2N5194 2N5195 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5193 ICEO Collector cut-off current 2N5194 2N5195 2N5193 ICBO Collector cut-off current 2N5194 2N5195 2N5193 ICEX Collector cut-off current 2N5194 2N5195 IEBO Emitter cut-off current 2N5193 IC=-1.5A ;IB=-0.15A IC=-4A ;IB=-1A IC=-1.5A ; VCE=-2V VCE=-40V; IB=0 VCE=-60V; IB=0 VCE=-80V; IB=0 VCB=-40V; IE=0 VCB=-60V; IE=0 VCB=-80V; IE=0 IC=-0.1A; IB=0 2N5193 2N5194 2N5195 CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -0.6 -1.2 -1.2 V V V -1.0 mA -0.1 mA VCE=-40V; VBE(off)=-1.5V TC=125℃ VCE=-60V; VBE(off)=-1.5V TC=125℃ VCE=-80V; VBE(off)=-1.5V TC=125℃ VEB=-5V; IC=0 -0.1 -2.0 -0.1 -2.0 -0.1 -2.0 -1.0 mA mA 25 hFE-1 DC current gain 2N5194 2N5195 2N5193 10 hFE-2 DC current gain 2N5194 2N5195 fT Transition frequency IC=-1A ; VCE=-10V;f=1MHz IC=-4A ; VCE=-2V 7 2 IC=-1.5A ; VCE=-2V 20 100 80 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5193 2N5194 2N5195 Fig.2 Outline dimensions 3
2N5194
1. 物料型号: - 型号包括2N5193、2N5194和2N5195,这些是硅PNP功率晶体管。

2. 器件简介: - 这些晶体管具有TO-126封装,是2N5190/5191/5192型号的补充。 - 它们具有出色的安全工作区。

3. 引脚分配: - PIN 1: 发射极(Emitter) - PIN 2: 集电极;连接到安装底座(Collector;connected to mounting base) - PIN 3: 基极(Base)

4. 参数特性: - 绝对最大额定值(Ta=25℃): - VCBO(集电极-基极电压):2N5193为-40V,2N5194为-60V,2N5195为-80V。 - VCEO(集电极-发射极电压):2N5193为-40V,2N5194为-60V,2N5195为-80V。 - VEBO(发射极-基极电压):-5V。 - lc(集电极电流):-4A。 - ICM(集电极电流-峰值):-7A。 - ls(基极电流):-1A。 - PD(总功率耗散):40W。 - T(结温):150°C。 - Tstg(储存温度):-65~150°C。

5. 功能详解: - 这些晶体管适用于中等功率的线性和开关应用。 - 热特性:结到外壳的热阻Rtj-c为3.12°C/W。

6. 应用信息: - 用于中等功率的线性和开关应用。

7. 封装信息: - 封装类型为TO-126,文档中提供了简化的外形图和符号(Fig.1)以及外形尺寸图(Fig.2)。
2N5194 价格&库存

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