2N5195

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2N5190/5191/5192 ・Excellent safe operating area APPLICATIONS ・For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N5193 2N5194 2N5195 ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N5193 VCBO Collector-base voltage 2N5194 2N5195 2N5193 VCEO Collector-emitter voltage 2N5194 2N5195 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -4 -7 -1 40 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5193 VCEO(SUS) Collector-emitter sustaining voltage 2N5194 2N5195 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5193 ICEO Collector cut-off current 2N5194 2N5195 2N5193 ICBO Collector cut-off current 2N5194 2N5195 2N5193 ICEX Collector cut-off current 2N5194 2N5195 IEBO Emitter cut-off current 2N5193 IC=-1.5A ;IB=-0.15A IC=-4A ;IB=-1A IC=-1.5A ; VCE=-2V VCE=-40V; IB=0 VCE=-60V; IB=0 VCE=-80V; IB=0 VCB=-40V; IE=0 VCB=-60V; IE=0 VCB=-80V; IE=0 IC=-0.1A; IB=0 2N5193 2N5194 2N5195 CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -0.6 -1.2 -1.2 V V V -1.0 mA -0.1 mA VCE=-40V; VBE(off)=-1.5V TC=125℃ VCE=-60V; VBE(off)=-1.5V TC=125℃ VCE=-80V; VBE(off)=-1.5V TC=125℃ VEB=-5V; IC=0 -0.1 -2.0 -0.1 -2.0 -0.1 -2.0 -1.0 mA mA 25 hFE-1 DC current gain 2N5194 2N5195 2N5193 10 hFE-2 DC current gain 2N5194 2N5195 fT Transition frequency IC=-1A ; VCE=-10V;f=1MHz IC=-4A ; VCE=-2V 7 2 IC=-1.5A ; VCE=-2V 20 100 80 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5193 2N5194 2N5195 Fig.2 Outline dimensions 3