2N5239

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High power dissipation APPLICATIONS ・Switching regulator ・Inverters ・Power amplifiers ・Deflection circuits ・High-voltage bridge amplifiers PINNING (See Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2N5239 Fig.1 simplified outline (TO-3) and symbol Collector MAXIMUN RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tc=25℃ CONDITIONS Open emitter Open base Open collector VALUE 300 225 6 5 2 100 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.75 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N5239 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 225 V V(BR)EBO Emitter-base breakdown voltage IE=20mA ; IC=0 6 V VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.25A 2.5 V VCEsat-2 Collector-emitter saturation voltage IC=4.5A; IB=1.125A 5.0 V VBE Base-emitter on voltage IC=2A ; VCE=10V VCE=300V; VBE=-1.5V TC=150℃ VCE=200V; IB=0 3.0 4.0 5.0 5.0 V ICEV Collector cut-off current mA ICEO Collector cut-off current mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=0.4A ; VCE=10V 20 80 hFE -2 DC current gain IC=2A ; VCE=10V hFE-3 DC current gain IC=4.5A ; VCE=10V 5 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF fT Transition frequency IC=0.2A ; VCE=10V 2 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5239 Fig.2 Outline dimensions 3