2N5240

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5240 DESCRIPTION ·High Voltage: VCEO(SUS)= 300V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER(SUS) VCEO(SUS) VEBO IC IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE≤50Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 375 350 300 6 5 2 100 200 -65~200 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.75 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N5240 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;IB= 0 300 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;RBE≤ 50Ω 350 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.02A; IC= 0 6 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.125A 5.0 V VBE(on) ICEV Base-Emitter On Voltage IC= 2A ; VCE= 10V VCE=375V; VBE= -1.5V VCE=300V; VBE= -1.5V;TC= 150℃ VCE= 200V; IB= 0 3.0 2 3 2 V Collector Cutoff Current mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 5 mA hFE-1 DC Current Gain IC= 0.4A; VCE= 10V 20 80 hFE-2 DC Current Gain IC= 2A; VCE= 10V 20 80 hFE-3 DC Current Gain Current-Gain—Bandwidth Product IC= 4.5A; VCE= 10V 5 fT IC= 0.2A; VCE= 10V 2 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 250 pF isc Website：www.iscsemi.cn 2