2N5241

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5241 DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION MAXIMUN RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tc=25℃ CONDITIONS Open emitter Open base Open collector VALUE 400 400 5 5 125 165 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.46 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N5241 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 2.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A VCB=400V; IE=0 TC=125℃ VCE=400V; IB=0 2.0 0.2 2.0 5.0 V ICBO Collector cut-off current mA ICEO Collector cut-off current mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=2.5A ; VCE=5V 15 35 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5241 Fig.2 Outline dimensions 3