2N5302

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4398/4399/5745 ・Low collector/saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N5301 2N5302 2N5303 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5301 VCBO Collector-base voltage 2N5302 2N5303 2N5301 VCEO Collector-emitter voltage 2N5302 2N5303 VEBO IC IB PD Tj Tstg Emitter-base voltage 2N5301/5302 Collector current 2N5303 Base current Total power dissipation Junction temperature Storage temperature TC=25℃ 20 7.5 200 200 -65~200 A W ℃ ℃ Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 30 A V V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5301 VCEO(SUS) Collector-emitter sustaining voltage 2N5302 2N5303 VCEsat-1 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage 2N5301/5302 IC=10A; IB=1A 2N5303 2N5301/5302 2N5303 2N5301/5302 2N5303 IC=20A ;IB=2A IC=15A ;IB=1.5A IC=30A ;IB=6A IC=20A ;IB=4A IC=10A; IB=1A IC=15A ;IB=1.5A 2N5303 2N5301/5302 2N5303 2N5301/5302 2N5303 2N5301/5302 2N5303 IC=20A ;IB=2A IC=0.2A ;IB=0 2N5301 2N5302 2N5303 CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 0.75 V 1.0 2.0 V 1.5 3.0 V 2.0 1.7 1.8 V 2.0 2.5 IC=20A ;IB=4A IC=15A ; VCE=2V IC=10A ; VCE=2V IC=30A ; VCE=4V IC=20A ; VCE=4V VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V 40 15 60 1.7 V 1.5 3.0 V 2.5 1.0 10 5.0 1.0 5.0 mA mA mA mA V V VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N5301/5302 VBEsat-3 VBE-1 VBE-2 ICEX ICEO ICBO IEBO hFE-1 hFE-2 Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain 2N5303 DC current gain 2N5301/5302 2N5303 IC=10A ; VCE=2V IC=15A ; VCE=2V IC=20A ; VCE=4V 5 IC=30A ; VCE=4V IC=1A ; VCE=10V;f=1.0MHz 2 MHz hFE-3 fT DC current gain 2N5301/5302 Transition frequency 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5301 2N5302 2N5303 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3