2N5468

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High-voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5468 2N5469 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER 2N5468 Collector-base voltage 2N5469 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open base Open collector Open emitter 700 400 7 3 5 1 70 150 -65~200 V V A A A W ℃ ℃ CONDITIONS VALUE 500 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5468 2N5469 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 400 V VCEsat VBEsat Collector-emitter saturation voltage IC=2A; IB=0.4A IC=2A; IB=0.4A 2.0 V Base-emitter saturation voltage 2.0 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 VCE=ratedVCEO;VBE(off)=1.5V TC=125℃ VEB=5V; IC=0 1.0 1.0 5.0 1.0 mA ICEV Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=3A ; VCE=5V 15 60 fT Trainsistion frequency IC=1A ; VCE=10V;f=1MHz 2.5 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5468 2N5469 Fig.2 outline dimensions 3