2N5498

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Low saturation voltage ・High Safe Operating Area APPLICATIONS ・Designed for high power audio, disk head positioners and other linear applications. ・These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N5498 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 130 7 15 4 200 150 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N5498 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 130 V VCER Collector-emitter sustaining voltage IC=0.2A ;RBE=100Ohm 150 V VCEsat-1 Collector-emitter saturation voltage IC=8A; IB=0.8A 1.4 V VCEsat-2 Collector-emitter saturation voltage IC=15A ;IB=3A 4.0 V ICEO Collector cut-off current VCE=130V; IB=0 VCE=130V; VBE(off)=1.5V TC=150℃ VEB=7V; IC=0 2.0 2.0 10.0 1.0 mA ICEX Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=15A ; VCE=5V 10 50 fT Transition frequency IC=1A ; VCE=10V 1 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5498 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3