2N5559

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5559 DESCRIPTION ・With TO-3 package ・Excellent safe operating area APPLICATIONS ・For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 120 7 10 15 100 150 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N5559 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 120 V VCEsat Collector-emitter saturation voltage IC=10A; IB=2A 5.0 V VBE Base-emitter on voltage IC=10A ; VCE=4V 5.7 V ICEO Collector cut-off current VCE=140V; IB=0 VCE=120V; VBE(off)=1.5V TC=150℃ VEB=7V; IC=0 5.0 2.0 10 2.0 mA ICEX Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=4A ; VCE=2V 12 60 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5559 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3