2N5609

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5605 2N5607 2N5609 2N5611 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5605 VCBO Collector-base voltage 2N5607/5609 2N5611 2N5605 VCEO Collector-emitter voltage 2N5607/5609 2N5611 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -60 -80 -100 -5 -5 25 150 -65~150 V A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5605 VCEO(SUS) Collector-emitter sustaining voltage 2N5607/5609 2N5611 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5605/5609 hFE DC current gain 2N5607/5611 2N5605/5609 fT Transition frequency 2N5607/5611 2N5605 2N5607 2N5609 2N5611 CONDITIONS MIN -60 TYP. MAX UNIT IC=50mA ;IB=0 -80 -100 V IC=-1A; IB=-0.1A IC=-2.5A ; VCE=-5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO,IB=0 VEB=-5V; IC=0 70 IC=-2.5A ; VCE=-5V 30 70 IC=-0.5A ; VCE=-10V 60 -0.5 -1.5 -0.1 -1.0 -0.1 200 90 V V mA mA mA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5605 2N5607 2N5609 2N5611 Fig.2 outline dimensions 3