2N5610

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5606 VCBO Collector-base voltage 2N5608/5610 2N5612 2N5606 VCEO Collector-emitter voltage 2N5608/5610 2N5612 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 60 80 100 5 5 25 150 -65~150 V A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5606 VCEO(SUS) Collector-emitter sustaining voltage 2N5608/5610 2N5612 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5606/5610 hFE DC current gain 2N5608/5612 2N5606/5610 fT Transition frequency 2N5608/5612 2N5606 2N5608 2N5610 2N5612 CONDITIONS MIN 60 TYP. MAX UNIT IC=50mA ;IB=0 80 100 V IC=1A; IB=0.1A IC=2.5A ; VCE=5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO,IB=0 VEB=5V; IC=0 70 IC=2.5A ; VCE=5V 30 70 IC=0.5A ; VCE=10V 60 0.5 1.5 0.1 1.0 0.1 200 90 V V mA mA mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5606 2N5608 2N5610 2N5612 Fig.2 outline dimensions 3