2N5612A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5612A DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 100 5 5 25 150 -65~150 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N5612A MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=50mA ;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.5 V VBE Base-emitter on voltage IC=2.5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA ICEO Collector cut-off current VCE= Rated VCEO,IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=2.5A ; VCE=5V 30 150 fT Transition frequency IC=0.5A ; VCE=10V 60 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5612A Fig.2 outline dimensions 3