Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5612A
DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 100 5 5 25 150 -65~150 UNIT V V V A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2N5612A
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=50mA ;IB=0
100
V
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.1A
0.5
V
VBE
Base-emitter on voltage
IC=2.5A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
0.1
mA
ICEO
Collector cut-off current
VCE= Rated VCEO,IB=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=2.5A ; VCE=5V
30
150
fT
Transition frequency
IC=0.5A ; VCE=10V
60
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5612A
Fig.2 outline dimensions
3
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