2N5624

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For audio and general-purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5622 VCBO Collector-base voltage 2N5624/5626 2N5628 2N5622 VCEO Collector-emitter voltage 2N5624/5626 2N5628 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 60 80 100 5 10 100 150 -65~200 V A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5622 VCEO(SUS) Collector-emitter sustaining voltage 2N5624/5626 2N5628 VCEsat VBE ICBO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current 2N5622/5626 hFE DC current gain 2N5624/5628 2N5622/5626 fT Transition frequency 2N5624/5628 2N5622 2N5624 2N5626 2N5628 CONDITIONS MIN 60 TYP. MAX UNIT IC=50mA ;IB=0 80 100 V IC=10A; IB=1A IC=5A ; VCE=5V VCB=Rated VCBO; IE=0 VEB=5V; IC=0 70 IC=5A ; VCE=5V 30 40 IC=1A ; VCE=12V 30 1.5 1.5 0.1 0.1 200 90 V V mA mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5622 2N5624 2N5626 2N5628 Fig.2 outline dimensions 3