2N5627

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For audio and general-purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5621 VCBO Collector-base voltage 2N5623/5625 2N5627 2N5621 VCEO Collector-emitter voltage 2N5623/5625 2N5627 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -60 -80 -100 -5 -10 100 150 -65~200 V A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5621 VCEO(SUS) Collector-emitter sustaining voltage 2N5623/5625 2N5627 VCEsat VBE ICBO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current 2N5621/5625 hFE DC current gain 2N5623/5627 2N5621/5625 fT Transition frequency 2N5623/5627 2N5621 2N5623 2N5625 2N5627 CONDITIONS MIN -60 TYP. MAX UNIT IC=-50mA ;IB=0 -80 -100 V IC=-10A; IB=-1A IC=-5A ; VCE=-5V VCB=Rated VCBO; IE=0 VEB=-5V; IC=0 70 IC=-5A ; VCE=-5V 30 40 IC=-1A ; VCE=-12V 30 -1.5 -1.5 -0.1 -0.1 200 90 V V mA mA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5621 2N5623 2N5625 2N5627 Fig.2 outline dimensions 3