2N5631

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain@IC=8A ・Low collector saturation voltage APPLICATIONS ・For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N5631 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 140 140 7 16 20 5.0 200 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEO ICEX IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=10A; IB=1A IC=16A ;IB=4A IC=10A; IB=1A IC=8A ; VCE=2V VCB=ratedVCBO; IE=0 VCE=70V; IB=0 VCE=ratedVCB ;VBE(off)=1.5V TC=150℃ VEB=7V; IC=0 IC=8A ; VCE=2V IC=16A ; VCE=2V IE=0 ; VCB=10V ;f=0.1MHz IC=1A ; VCE=20V ;f=0.5MHz 1.0 15 4 MIN 140 TYP. 2N5631 MAX UNIT V 1.0 2.0 1.8 1.5 2.0 2.0 2.0 7.0 5.0 60 V V V V mA mA mA mA 500 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5631 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3