2N5660

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High breakdown voltage APPLICATIONS ・High speed switching and linear amplifier ・High-voltage operational amplifiers ・Switching regulators ,converters ・Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2N5660 2N5661 Fig.1 simplified outline (TO-66) and symbol Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N5660 VCBO Collector-base voltage 2N5661 2N5660 VCEO Collector-emitter voltage 2N5661 VEBO IC IB PT Emitter-base voltage Collector current Base current TC=100℃ Total power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 200 -65~200 ℃ ℃ Open collector Open base 300 6 2.0 0.5 20 W V A A Open emitter 400 200 V CONDITIONS VALUE 250 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter breakdown voltage 2N5660 IC=10mA ; IB=0 2N5661 IE=10μA ; IC=0 IC=1A; IB=0.1A IC=2A; IB=0.4A IC=1A ;IB=0.1A IC=2A; IB=0.4A VCE=200V;VBE(off)=1.5V CONDITIONS 2N5660 2N5661 MIN 200 TYP. MAX UNIT V(BR)CEO V 300 6 0.4 0.8 1.2 1.5 V V V V V V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage 2N5660 ICES Collector cut-off current 2N5661 2N5660 VCE=300V;VBE(off)=1.5V VCB=250V; IE=0 0.2 mA ICBO Collector cut-off current 2N5661 2N5660 VCB=400V; IE=0 40 IC=50mA ; VCE=2V 2N5661 2N5660 25 40 IC=0.5A ; VCE=5V 2N5661 25 IC=1A ; VCE=5V IC=2A ; VCE=5V IE=0 ; VCB=10V;f=1MHz 2N5660 VCC=100V;IC=0.5A;IB1=-IB2=15mA 15 5 1.0 mA hFE-1 DC current gain 120 75 hFE-2 DC current gain hFE-3 hFE-4 COB DC current gain DC current gain Output capacitance 45 pF ton Turn-on time 2N5661 2N5660 VCC=100V;IC=0.5A;IB1=-IB2=25mA VCC=100V;IC=0.5A;IB1=-IB2=15mA VCC=100V;IC=0.5A;IB1=-IB2=25mA 0.25 μs 0.85 μs 1.2 toff Turn-off time 2N5661 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5660 2N5661 Fig.2 Outline dimensions 3