2N5664

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High breakdown voltage APPLICATIONS ・High speed switching and linear amplifier ・High-voltage operational amplifiers ・Switching regulators ,converters ・Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5664 2N5665 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N5664 VCBO Collector-base voltage 2N5665 2N5664 VCEO Collector-emitter voltage 2N5665 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 300 6 5.0 1.0 52.5 200 -65~200 V A A W ℃ ℃ Open emitter 400 200 V CONDITIONS VALUE 250 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter breakdown voltage 2N5664 IC=10mA ; IB=0 2N5665 IE=10μA ; IC=0 IC=3A; IB=0.3A CONDITIONS 2N5664 2N5665 MIN 200 TYP. MAX UNIT V(BR)CEO V 300 6 V V(BR)EBO Emitter-base breakdown voltage Collector-emitter saturation voltage 2N5664 2N5665 VCEsat-1 0.4 IC=3A; IB=0.6A IC=5A; IB=1A IC=3A; IB=0.3A 1.2 2N5665 IC=3A; IB=0.6A IC=5A; IB=1A VCE=200V;VBE(off)=1.5V 0.2 2N5665 2N5664 VCE=300V;VBE(off)=1.5V VCB=250V; IE=0 1.0 2N5665 2N5664 VCB=400V; IE=0 40 IC=0.5A ; VCE=2V 2N5665 2N5664 25 40 IC=1A ; VCE=5V 2N5665 2N5664 25 15 IC=3A ; VCE=5V 2N5665 10 IC=5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz VCC=30V;IC=1A;IB1=-IB2=30mA 2N5664 5 120 0.25 1.5 VCC=30V;IC=1A;IB1=-IB2=50mA 2N5665 2.0 75 120 1.5 1.0 V VCEsat-2 Collector-emitter saturation voltage Base-emitter saturation voltage 2N5664 V VBEsat-1 V VBEsat-2 Base-emitter saturation voltage 2N5664 V ICES Collector cut-off current mA ICBO Collector cut-off current mA hFE-1 DC current gain hFE-2 DC current gain hFE-3 DC current gain hFE-4 COB ton DC current gain Output capacitance Turn-on time pF μs toff Turn-off time μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5664 2N5665 Fig.2 Outline dimensions 3