2N5671

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5671 2N5672 DESCRIPTION ・With TO-3 package ・High current ,high speed APPLICATIONS ・Intended for high current and fast switching industrial applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5671 VCBO Collector-base voltage 2N5672 2N5671 VCEO Collector-emitter voltage 2N5672 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 120 7 30 10 140 200 -65~200 V A A W ℃ ℃ Open emitter 150 90 V CONDITIONS VALUE 120 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5671 2N5672 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5671 IC=0.2A ;IB=0 2N5672 IC=15A; IB=1.2A IC=15A ;IB=1.2A IC=15A ; VCE=5V VCE=80V; IB=0 2N5671 2N5672 2N5671 2N5672 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Trainsistion frequency VCE=110V; VBE(off)=1.5V VCE=135V; VBE(off)=1.5V 120 0.75 1.5 1.6 10 12 10 mA VCE=100V;VBE(off)=1.5V; TC=150℃ 15 10 10 20 20 40 MHz 100 mA V V V mA CONDITIONS MIN 90 V TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage VCEsat VBEsat VBE ICEO Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current ICEV Collector cut-off current VEB=7V; IC=0 IC=15A ; VCE=2V IC=20A ; VCE=5V IC=2A ; VCE=10V;f=1MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=15A ;IB1=- IB2=1.2A VCC=30V;tp=0.1ms 0.5 1.5 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5671 2N5672 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3