2N5676

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5676 DESCRIPTION ・With TO-66 package ・High transition frequency APPLICATIONS ・For use as high-frequency drivers in audio amplifiers PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -125 -100 -5 -2 2 150 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N5676 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0 -100 V VCEsat VBEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A IC=-1A ;IB=-0.1A -0.5 V Base-emitter saturation voltage -1.2 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.2 V ICEO Collector cut-off current VCE=-50V; IB=0 -0.5 mA ICBO Collector cut-off current VCB=-125V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 hFE-2 DC current gain IC=-0.1A ; VCE=-5V IC=-0.5A ; VCE=-5V 50 DC current gain 50 150 fT Transition frequency IC=-100mA;VCE=10V 50 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5676 Fig.2 outline dimensions 3