2N5734

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5734 DESCRIPTION ·With TO-3 package ·High current capability APPLICATIONS ·For linear amplifier and inductive switching applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 80 7 30 30 150 150 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N5734 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 80 V VCEsat-1 Collector-emitter saturation voltage IC=15 A;IB=1.5 A 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=30 A;IB=6 A 4.0 V VBE Base-emitter on voltage IC=15A ; VCE=2V 2.7 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=10A ; VCE=2V 30 300 hFE-2 DC current gain IC=20A ; VCE=4V 5 fT Transition frequency IC=1A ; VCE=10V 30 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5734 Fig.2 Outline dimensions 3