2N5737

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5737 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -60V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=100℃ Junction Temperature Storage Temperature VALUE -60 -60 -5 -10 -20 -4 50 150 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal Resistance,Junction to Ambient MAX 0.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= -200mA ; IB= 0 IC= -5A; IB= -0.5A IC= -10A; IB= -2.5A IC= -5A; IB= -0.5A IC= -4A; VCE= -4V VCE= -60V; IB= 0 VCB= -60V; IE= 0 VEB= -5V; IC= 0 IC= -5A; VCE= -5V IC= -10A; VCE= -5V IC= -0.5A; VCE= -10V 20 4 10 MIN -60 2N5737 MAX UNIT V -0.5 -3.0 -1.2 -1.5 -0.5 -0.1 -0.1 80 V V V V mA mA mA MHz isc Website：www.iscsemi.cn 2