2N5741

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5741 VCBO Collector-base voltage 2N5742 2N5741 VCEO Collector-emitter voltage 2N5742 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=100℃ Open collector Open base -100 -5 -20 65 150 -65~200 V A W ℃ ℃ Open emitter -100 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5741 VCEO(SUS) Collector-emitter sustaining voltage 2N5742 VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-10A; IB=-1A IC=-20A ;IB=-4A IC=-10A; IB=-1A IC=-10A ; VCE=-5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ VEB=-5V; IC=0 IC=-10A ; VCE=-5V IC=-20A ; VCE=-5V IC=-1A ; VCE=-10V IC=-0.2A ;IB=0 CONDITIONS 2N5741 2N5742 MIN -60 TYP. MAX UNIT V -100 -1.0 -3.0 -1.8 -1.5 -0.1 -0.5 -5.0 -1.0 20 10 10 MHz 80 V V V V mA mA mA 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5741 2N5742 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3