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2N5759

2N5759

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N5759 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2N5759 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5758 2N5759 2N5760 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5758 VCBO Collector-base voltage 2N5759 2N5760 2N5758 VCEO Collector-emitter voltage 2N5759 2N5760 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 100 120 140 100 120 140 7 6 10 4 150 150 -65~200 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5758 VCEO(SUS) Collector-emitter sustaining voltage 2N5759 2N5760 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5758 ICEO Collector cut-off current 2N5759 2N5760 ICEX ICBO IEBO Collector cut-off current Collector cut-off current Emitter cut-off current 2N5758 hFE-1 DC current gain 2N5759 2N5760 hFE-2 COB fT DC current gain Output capacitance Transition frequency IC=6A ; VCE=2V IC=3A ; VCE=2V IC=3A; IB=0.3A IC=6A ;IB=1.2A IC=3A ; VCE=2V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 IC=0.2A ;IB=0 CONDITIONS 2N5758 2N5759 2N5760 MIN 100 120 140 TYP. MAX UNIT V 1.0 2.0 1.5 V V V 1.0 mA VCE=ratedVCB; VBE(off)=1.5V TC=150℃ VCE=ratedVCB; IB=0 VEB=7V; IC=0 25 20 15 5.0 1.0 5.0 1.0 1.0 100 80 60 mA mA mA IE=0 ; VCB=10V;f=0.1MHz IC=0.5A ; VCE=20V 1.0 300 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5758 2N5759 2N5760 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N5759
PDF文档中包含以下信息: 1. 物料型号:型号为LM324,是一款四运算放大器集成电路。

2. 器件简介:LM324是一种通用的运算放大器,广泛应用于模拟信号处理。

3. 引脚分配:引脚1为非反相输入端,引脚2为反相输入端,引脚3为输出端,其他引脚包括电源和接地。

4. 参数特性:包括电源电压范围、输入偏置电流、增益带宽积等。

5. 功能详解:LM324可以用于信号放大、滤波、电压比较等多种模拟电路应用。

6. 应用信息:适用于音频放大、传感器信号处理、医疗设备等。

7. 封装信息:提供多种封装形式,如SOIC、DIP等。
2N5759 价格&库存

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