2N5760

2N5760

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N5760 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2N5760 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5758 2N5759 2N5760 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5758 VCBO Collector-base voltage 2N5759 2N5760 2N5758 VCEO Collector-emitter voltage 2N5759 2N5760 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 100 120 140 100 120 140 7 6 10 4 150 150 -65~200 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5758 VCEO(SUS) Collector-emitter sustaining voltage 2N5759 2N5760 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5758 ICEO Collector cut-off current 2N5759 2N5760 ICEX ICBO IEBO Collector cut-off current Collector cut-off current Emitter cut-off current 2N5758 hFE-1 DC current gain 2N5759 2N5760 hFE-2 COB fT DC current gain Output capacitance Transition frequency IC=6A ; VCE=2V IC=3A ; VCE=2V IC=3A; IB=0.3A IC=6A ;IB=1.2A IC=3A ; VCE=2V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 IC=0.2A ;IB=0 CONDITIONS 2N5758 2N5759 2N5760 MIN 100 120 140 TYP. MAX UNIT V 1.0 2.0 1.5 V V V 1.0 mA VCE=ratedVCB; VBE(off)=1.5V TC=150℃ VCE=ratedVCB; IB=0 VEB=7V; IC=0 25 20 15 5.0 1.0 5.0 1.0 1.0 100 80 60 mA mA mA IE=0 ; VCB=10V;f=0.1MHz IC=0.5A ; VCE=20V 1.0 300 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5758 2N5759 2N5760 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N5760
1. 物料型号: - 2N5758、2N5759、2N5760

2. 器件简介: - 这些是硅NPN功率晶体管,具有TO-3封装,低集电极饱和电压和优秀的安全工作区。

3. 引脚分配: - 1号引脚:基极(Base) - 2号引脚:发射极(Emitter) - 3号引脚:集电极(Collector)

4. 参数特性: - 绝对最大额定值: - 2N5758:100V - 2N5759:120V - 2N5760:140V - 集电极电流(IC):6A(连续),10A(峰值) - 基极电流(IB):4A - 总功率耗散(PD):在25℃时为150W - 结温(Tj):150℃ - 存储温度(Tstg):-65℃至200℃

5. 功能详解: - 热阻(Rth j-c):1.17℃/W - 维持电压(VCEO(SUS)):2N5758为100V,2N5759为120V,2N5760为140V - 饱和电压(VCEsat):在不同集电极电流下分别为1.0V和2.0V - 基极-发射极电压(VBE):在3A集电极电流和2V集电极-发射极电压下为1.5V - 截止电流(ICEO、IcEx、IcBO、IEBO):在不同条件下分别为1.0mA和5.0mA - 直流电流增益(hFE):在不同条件下,2N5758为25至100,2N5759为20至80,2N5760为15至60 - 输出电容(CoB):300pF - 转换频率(fr):1.0MHz

6. 应用信息: - 用于高功率音频放大器应用和高电压开关稳压器电路。

7. 封装信息: - 图2显示了TO-3封装的外形尺寸,未标明的公差为±0.10mm。
2N5760 价格&库存

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