2N5805

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5804 2N5805 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5804 VCBO Collector-base voltage 2N5805 2N5804 VCEO Collector-emitter voltage 2N5805 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 300 6 5 110 150 -65~200 V A W ℃ ℃ Open emitter 375 225 V CONDITIONS VALUE 300 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5804 2N5805 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5804 VCEO(SUS) Collector-emitter sustaining voltage 2N5805 IC=0.1A ;IB=0 225 V 300 VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICEO Collector cut-off current VCE=RatedVCE; IB=0 10 mA 2N5804 ICEV Collector cut-off current 2N5805 VCE=RatedVCE; VBE(off)=1.5V 12 mA 10 IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=5A ; VCE=4V 20 100 fT Trainsistion frequency IC=1A ; VCE=10V 15 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5804 2N5805 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3