2N5839

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High breakdown voltage APPLICATIONS ・For use in switching power supply and other inductive switching circuits. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5838 VCBO Collector-base voltage 2N5839 2N5840 2N5838 VCEO Collector-emitter voltage 2N5839 2N5840 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 275 300 375 250 275 350 6 3 100 150 -65~200 V A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5838 VCEO(SUS) Collector-emitter sustaining voltage 2N5839 2N5840 VCEsat VBEsat ICBO ICEV IEBO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5838 hFE DC current gain 2N5839/5840 fT Transition frequency IC=2A ; VCE=3V IC=2A; IB=0.4A IC=2A; IB=0.4A IC=0.1A ;IB=0 2N5838 2N5839 2N5840 CONDITIONS MIN 250 275 350 TYP. MAX UNIT V 0.8 1.5 1.0 1.0 1.0 8 10 5 40 50 V V mA mA mA VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V VEB=5V; IC=0 IC=3A ; VCE=3V IC=1A ; VCE=10V;f=1.0MHz MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5838 2N5839 2N5840 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3