2N5868

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5867 2N5868 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5867 VCBO Collector-base voltage 2N5868 2N5867 VCEO Collector-emitter voltage 2N5868 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -5 -5 87.5 150 -65~200 V A W ℃ ℃ Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5867 2N5868 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5867 VCEO(SUS) Collector-emitter sustaining voltage 2N5868 IC=-0.1A ;IB=0 -60 V -80 VCEsat Collector-emitter saturation voltage IC=-5A;IB=-1A -1.0 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-1A -1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IB=0 -1.0 mA 2N5867 ICEO Collector cut-off current 2N5868 VCE=-30V; IB=0 -2.0 VCE=-40V; IB=0 mA IEBO hFE Emitter cut-off current VEB=-5V; IC=0 IC=-1.5A ; VCE=-4V 20 -1.0 mA DC current gain 100 fT Trainsistion frequency IC=-0.5A ; VCE=-10V;f=1MHz 4 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5867 2N5868 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3