2N5870

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5869 2N5870 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5869 VCBO Collector-base voltage 2N5870 2N5869 VCEO Collector-emitter voltage 2N5870 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 5 5 87.5 150 -65~200 V A W ℃ ℃ Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5869 2N5870 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5869 VCEO(SUS) Collector-emitter sustaining voltage 2N5870 VCEsat VBEsat ICBO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2N5869 ICEO Collector cut-off current 2N5870 IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency VCE=40V; IB=0 VEB=5V; IC=0 IC=1.5A ; VCE=4V IC=0.5A ; VCE=10V;f=1MHz 20 4 1.0 100 MHz mA IC=5A;IB=1A IC=5A; IB=1A VCB=ratedVCBO; IB=0 VCE=30V; IB=0 2.0 mA IC=0.1A ;IB=0 80 1.0 1.5 1.0 V V mA CONDITIONS MIN 60 V TYP. MAX UNIT 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5869 2N5870 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3